DocumentCode :
3380368
Title :
A 2.2mW CMOS LNA for 6–8.5GHz UWB receivers
Author :
Wu, Chang-Ching ; Sun, Xuening ; Sangiovanni-Vincentelli, Alberto ; Rabaey, Jan M.
Author_Institution :
Dept. of EECS, Univ. of California at Berkeley, Berkeley, CA, USA
fYear :
2010
fDate :
May 30 2010-June 2 2010
Firstpage :
1631
Lastpage :
1634
Abstract :
This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) consuming 2.2-mW core dc power for 6-8.5GHz wireless applications. A common-gate input stage is cascaded with a common-source second stage to perform input impedance matching and wideband stagger-tuning amplification, while the current-reuse topology minimizes the dc power dissipation. The design method used to achieve flat-gain response is presented. A detailed analysis gives insight into the issue on the input impedance and suggests a solution. Implemented in a 90-nm CMOS process, the measurement results show power gain of 13.35+/-0.55 dB, input third intercept point (IIP3) of-6.2 dBm, and noise figure of 5-6.5 dB. The silicon die with 0.22-mm2 active area allows the design to be adopted for highly integrated low-cost CMOS applications.
Keywords :
CMOS integrated circuits; impedance matching; low noise amplifiers; microwave receivers; radio networks; radio receivers; ultra wideband technology; CMOS LNA; IIP3; UWB receivers; common-gate input stage; common-source second stage; current reuse topology; dc power dissipation; frequency 6 GHz to 8.5 GHz; input impedance matching; input third intercept point; noise figure 5 dB to 6.5 dB; power 2.2 W; silicon die; size 90 nm; ultrawideband low noise amplifier; wideband stagger tuning amplification; wireless applications; Broadband amplifiers; CMOS process; Design methodology; Gain measurement; Impedance matching; Low-noise amplifiers; Power dissipation; Power measurement; Topology; Ultra wideband technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
Type :
conf
DOI :
10.1109/ISCAS.2010.5537463
Filename :
5537463
Link To Document :
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