A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology

Author

Campbell, Charles ; Lee, Cathy ; Williams, Victoria ; Kao, Ming-Yih ; Tserng, Hua-Quen ; Saunier, Paul

Author_Institution

TriQuint Semicond., Richardson, TX

fYear

2008

fDate

12-15 Oct. 2008

Firstpage

1

Lastpage

4

Abstract

The design and performance of a wideband power amplifier MMIC suitable for electronic warfare (EW) systems and other wide bandwidth applications is presented. The amplifier utilizes dual field plate 0.25-mum GaN on SiC device technology integrated into the three metal interconnect (3MI) process flow. Experimental results for the MMIC at 30V power supply operation demonstrate greater than 10 dB of small signal gain, 9 W to 15 W saturated output power and 20% to 38% peak power added efficiency over a 1.5 GHz to 17 GHz bandwidth.

Keywords

MMIC; electronic warfare; high electron mobility transistors; microwave power amplifiers; millimetre wave power amplifiers; semiconductor devices; wideband amplifiers; GaN; HEMT technology; SiC; bandwidth 1.5 GHz to 17 GHz; electronic warfare; semiconductor device technology; size 0.25 mum; three metal interconnect; voltage 30 V; wideband power amplifier MMIC; Bandwidth; Broadband amplifiers; Electronic warfare; Gallium nitride; HEMTs; MMICs; Power amplifiers; Power supplies; Power system interconnection; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-1939-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2008.38

Filename

4674493