Title :
A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology
Author :
Campbell, Charles ; Lee, Cathy ; Williams, Victoria ; Kao, Ming-Yih ; Tserng, Hua-Quen ; Saunier, Paul
Author_Institution :
TriQuint Semicond., Richardson, TX
Abstract :
The design and performance of a wideband power amplifier MMIC suitable for electronic warfare (EW) systems and other wide bandwidth applications is presented. The amplifier utilizes dual field plate 0.25-mum GaN on SiC device technology integrated into the three metal interconnect (3MI) process flow. Experimental results for the MMIC at 30V power supply operation demonstrate greater than 10 dB of small signal gain, 9 W to 15 W saturated output power and 20% to 38% peak power added efficiency over a 1.5 GHz to 17 GHz bandwidth.
Keywords :
MMIC; electronic warfare; high electron mobility transistors; microwave power amplifiers; millimetre wave power amplifiers; semiconductor devices; wideband amplifiers; GaN; HEMT technology; SiC; bandwidth 1.5 GHz to 17 GHz; electronic warfare; semiconductor device technology; size 0.25 mum; three metal interconnect; voltage 30 V; wideband power amplifier MMIC; Bandwidth; Broadband amplifiers; Electronic warfare; Gallium nitride; HEMTs; MMICs; Power amplifiers; Power supplies; Power system interconnection; Silicon carbide;
Conference_Titel :
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-1939-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2008.38
