Title :
A W-band LNA in 0.18-μm SiGe BiCMOS
Author :
Gilreath, Leland ; Jam, V. ; Heydan, P.
Author_Institution :
Nanoscale Commun. IC Lab., Univ. of California, Irvine, CA, USA
fDate :
May 30 2010-June 2 2010
Abstract :
This paper presents the design and implementation of a W-band LNA. Fabricated in a 0.18-μm SiGe BiCMOS technology, the five-stage LNA achieves a peak power gain of 19 dB with a 3-dB bandwidth from 70-97 GHz and a minimum noise figure of 9 dB. The LNA exhibits more than 10-dB gain and input return loss <;-12 dB across the entire W-band (75-110 GHz). The SiGe LNA is suitable for several W-band applications including 77/79-GHz automotive radars and passive imaging in the 80-110 GHz window.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; low noise amplifiers; millimetre wave amplifiers; semiconductor materials; BiCMOS fabrication; SiGe; W-band LNA; automotive radars; frequency 70 GHz to 110 GHz; gain 19 dB; input return loss; passive imaging; power gain; size 0.18 mum; Automotive engineering; Bandwidth; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Noise figure; Passive radar; Radar applications; Radar imaging; Silicon germanium;
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
DOI :
10.1109/ISCAS.2010.5537464
