Author :
Piotrowicz, S. ; Morvan, E. ; Aubry, R. ; Bansropun, S. ; Bouvet, T. ; Chartier, E. ; Dean, T. ; Drisse, O. ; Dua, C. ; Floriot, D. ; diForte Poisson, M.A. ; Gourdel, Y. ; Hydes, A.J. ; Jacquet, J.C. ; Jardel, O. ; Lancereau, D. ; Lean, J. O Mc ; Lecoustr
Abstract :
This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2-stages amplifier. To our knowledge, these results present a new state-of-the-art of X-Band MMIC power amplifiers.
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; European Defense Agency; HEMT microstrip amplifiers; Kerrigan project; MMIC power amplifiers; PAE X-band power amplifiers; power 58 W; Aluminum gallium nitride; Gallium nitride; Gold; HEMTs; MMICs; MODFETs; Microstrip; Power amplifiers; Power generation; Pulse amplifiers;
