Title :
Low Temperature A-SiC/Si Direct Bonding Technology for MEMS/NEMS
Author :
Du, Jiangang ; Zorman, Christian A.
Author_Institution :
Case Western Reserve Univ., Cleveland
Abstract :
A low temperature (450degC) amorphous, hydrogenated silicon carbide (a-SiC:H) thin film transfer technology by way of a-SiC:H/Si direct bonding is described. Compared to traditional thin film bonding and transfer processes, the proposed approach does not rely on IC-incompatible substances or high process temperatures to form the bond. Due to the ultra-smooth a-SiC surfaces, a CMP step normally used in traditional direct bonding is not required. Using this approach, prototype structures, such as nanogap channels and vacuum-sealed, micron-deep reservoirs with a-SiC films as capping layers have been successful fabricated.
Keywords :
bonding processes; chemical mechanical polishing; micromechanical devices; nanotechnology; silicon compounds; wide band gap semiconductors; CMP step; MEMS; NEMS; SiC-Si; amorphous hydrogenated thin film transfer technology; capping layers; low temperature direct bonding technology; nanogap channels; temperature 450 C; thin film bonding; transfer process; vacuum sealed cavities; vacuum-sealed micron-deep reservoirs; Amorphous materials; Bonding; Micromechanical devices; Nanoelectromechanical systems; Nanostructures; Prototypes; Semiconductor thin films; Silicon carbide; Temperature; Transistors; direct bonding; silicon carbide; vacuum sealed cavities;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location :
Lyon
Print_ISBN :
1-4244-0842-3
Electronic_ISBN :
1-4244-0842-3
DOI :
10.1109/SENSOR.2007.4300573
