DocumentCode
3380458
Title
Design-in reliability approach for Hot Carrier injection modeling in the context of AMS/RF applications
Author
Huard, Vincent ; Quemerais, Thomas ; Cacho, Florian ; Moquillon, Laurence ; Haendler, Sebastien ; Federspiel, Xavier
Author_Institution
STMicroelectronics, Crolles, France
fYear
2011
fDate
10-14 April 2011
Abstract
Both AMS/RF applications and High-Speed digital designs present voltage transitions much faster than the conventional quasi-static experiments used to build up Hot Carrier models. This work combined reliability simulations and experimental DC/RF stresses to demonstrate that our framework of HCI reliability simulations is suitable to re-produce electrical ageing up to 60GHz.
Keywords
ageing; hot carriers; integrated circuit design; integrated circuit modelling; AMS/RF applications; DC/RF stresses; HCI reliability simulations; conventional quasistatic experiments; design-in reliability approach; electrical ageing; high-speed digital designs; hot carrier injection modeling; voltage transitions; Degradation; Human computer interaction; Mathematical model; Radio frequency; Reliability; Semiconductor device modeling; Stress; HCI; Power Amplifier; RF; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location
Monterey, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-9113-1
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2011.5784517
Filename
5784517
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