Detuning characteristics of a subharmonically hybrid mode-locked monolithic semiconductor laser

Author

Hoshida, T. ; Liu, H.F. ; Tsuchiya, M. ; Ogawa, Y. ; Kamiya, T.

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

59

Lastpage

60

Abstract

The detuning characteristics of subharmonic hybrid mode-locking (SH-ML) of a monolithic semiconductor laser at 33 GHz are investigated. We used a 1.55 /spl mu/m semiconductor laser consisting of a saturable absorber (SA), a gain, a phase control, and a DBR section. A locking bandwidth of 56 MHz is obtained under the third order SH-ML, which is more than twice larger than that under the fundamental hybrid mode-locking (FH-ML).

Keywords

distributed Bragg reflector lasers; electro-optical modulation; laser mode locking; laser noise; laser tuning; optical saturable absorption; phase noise; semiconductor lasers; 1.55 mum; 33 GHz; 56 MHz; DBR section; detuning characteristics; fundamental hybrid mode-locking; gain section; locking bandwidth; monolithic semiconductor laser; phase control section; saturable absorber; semiconductor laser; subharmonic hybrid mode-locking; third order SH-ML; Bandwidth; Frequency; Industrial electronics; Laboratories; Laser mode locking; Laser noise; Laser stability; Phase noise; Photonics; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.553747

Filename

553747