DocumentCode
3380509
Title
Electron beam direct writing systems for 64 Mbit DRAM and beyond
Author
Nakamura, Kazumitsu ; Saitou, Norio
Author_Institution
Naka Works, Hitachi Ltd, Katsuta, Japan
fYear
1991
fDate
22-24 May 1991
Firstpage
33
Lastpage
37
Abstract
The features of the current EB system, HL-700 series and its performances are presented. The basic concept and some experimental results of the next generation system which has a key technology of cell projection is proposed
Keywords
DRAM chips; electron beam lithography; integrated circuit technology; 64 Mbit; DRAM; HL-700 series; cell projection; electron beam direct writing; electron beam lithography; performances; Cathodes; Circuits; Electron beams; Electron optics; Fabrication; Hardware; Random access memory; Resists; Throughput; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location
Taipei
ISSN
1524-766X
Print_ISBN
0-7803-0036-X
Type
conf
DOI
10.1109/VTSA.1991.246717
Filename
246717
Link To Document