6.5 Watt, 35 GHz Balanced Power Amplifier MMIC using 6-Inch GaAs pHEMT Commercial Technology

Author

Mahon, Simon J. ; Young, Alan C. ; Fattorini, Anthony P. ; Harvey, James T.

Author_Institution

Mimix Asia, Sydney, NSW

fYear

2008

fDate

12-15 Oct. 2008

Firstpage

1

Lastpage

4

Abstract

A 6.5 watt power amplifier MMIC has been developed for the 35 GHz band. The amplifier exhibits high performance at low processing cost through the use of a commercially available 6-inch, 0.15-mum pHEMT process with 100 mum thick substrate. The balanced four stage amplifier MMIC has 23 dB of gain, 6.5 watts saturated output power (38.1 dBm) with high absorption load for driving into a mismatch, and power added efficiency of 24%. In terms of output power, this is to the authors´ knowledge the best reported for fully matched GaAs pHEMT MMICs on 100-mum substrates at millimetre-wave frequencies.

Keywords

III-V semiconductors; MMIC power amplifiers; gallium arsenide; high electron mobility transistors; GaAs; MMIC; frequency 35 GHz; gain 23 dB; pHEMT; power 6.5 W; power amplifier; size 0.15 mum; size 100 mum; size 6 in; Absorption; Costs; Frequency; Gain; Gallium arsenide; High power amplifiers; MMICs; PHEMTs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-1939-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2008.47

Filename

4674502