DocumentCode :
3380589
Title :
A new scheme for testability improvement of ECC incorporated memory
Author :
Wang, Lei ; Jiang, Jianhua ; Zhou, Yumei ; Ren, Gaofeng
Author_Institution :
Inst. of Microelectron., Beijing, China
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
240
Lastpage :
243
Abstract :
With the technology node going to the nanometer region, the chips, especially the memory parts, face a huge challenge in the reliability. The error-correcting code (ECC) is a traditional way to improve the chips´ reliability; however, it has a problem that the memory with ECC attached is difficult to be test in normal lab situation. To solve this problem, we design a new scheme for the input part of the memory to enable a “wrong” check bits to be inputted into the memory. The chips using this method have been taped out and the test results show that their testability have been increased with little harm to the performance in other aspects.
Keywords :
error correction codes; integrated circuit design; integrated circuit reliability; integrated circuit testing; random-access storage; ECC; ECC incorporated memory; error-correcting code; nanometer region; reliability; testability improvement; Hip; Reliability engineering; Reliability theory; Three dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
ISSN :
2162-7541
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
Type :
conf
DOI :
10.1109/ASICON.2011.6157166
Filename :
6157166
Link To Document :
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