DocumentCode :
3380604
Title :
An 81Gb/s, 1.2V TIALA-Retimer in Standard 65nm CMOS
Author :
Shahramian, Shahriar ; Carusone, Anthony Chan ; Schvan, Peter ; Voinigescu, Sorin P.
Author_Institution :
Dept. of ECE, Univ. of Toronto, Toronto, ON
fYear :
2008
fDate :
12-15 Oct. 2008
Firstpage :
1
Lastpage :
4
Abstract :
This paper describes the fastest full-rate retiming circuit reported to date in any semiconductor technology. By combining low- and high-VT MOSFETs on the data and clock path, respectively, and CMOS-inverter based transimpedance amplifiers as low-noise, broadband preamplifiers, record speed is achieved with 1.2 V supply. The power consumption of the 81 GHz latch is only 9.6 mW. On-wafer measurements demonstrate correct full-rate retiming up to 81 Gb/s with jitter reduction and rise/fall time improvements.
Keywords :
CMOS integrated circuits; MOSFET; low noise amplifiers; wideband amplifiers; CMOS-inverter based transimpedance amplifiers; MOSFET; broadband preamplifiers; frequency 81 GHz; full-rate retiming circuit; low-noise amplifier; power 9.6 mW; voltage 1.2 V; Broadband amplifiers; CMOS technology; Circuits; Clocks; Energy consumption; Latches; Low-noise amplifiers; MOSFETs; Preamplifiers; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location :
Monterey, CA
ISSN :
1550-8781
Print_ISBN :
978-1-4244-1939-5
Electronic_ISBN :
1550-8781
Type :
conf
DOI :
10.1109/CSICS.2008.51
Filename :
4674506
Link To Document :
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