DocumentCode
3380604
Title
An 81Gb/s, 1.2V TIALA-Retimer in Standard 65nm CMOS
Author
Shahramian, Shahriar ; Carusone, Anthony Chan ; Schvan, Peter ; Voinigescu, Sorin P.
Author_Institution
Dept. of ECE, Univ. of Toronto, Toronto, ON
fYear
2008
fDate
12-15 Oct. 2008
Firstpage
1
Lastpage
4
Abstract
This paper describes the fastest full-rate retiming circuit reported to date in any semiconductor technology. By combining low- and high-VT MOSFETs on the data and clock path, respectively, and CMOS-inverter based transimpedance amplifiers as low-noise, broadband preamplifiers, record speed is achieved with 1.2 V supply. The power consumption of the 81 GHz latch is only 9.6 mW. On-wafer measurements demonstrate correct full-rate retiming up to 81 Gb/s with jitter reduction and rise/fall time improvements.
Keywords
CMOS integrated circuits; MOSFET; low noise amplifiers; wideband amplifiers; CMOS-inverter based transimpedance amplifiers; MOSFET; broadband preamplifiers; frequency 81 GHz; full-rate retiming circuit; low-noise amplifier; power 9.6 mW; voltage 1.2 V; Broadband amplifiers; CMOS technology; Circuits; Clocks; Energy consumption; Latches; Low-noise amplifiers; MOSFETs; Preamplifiers; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location
Monterey, CA
ISSN
1550-8781
Print_ISBN
978-1-4244-1939-5
Electronic_ISBN
1550-8781
Type
conf
DOI
10.1109/CSICS.2008.51
Filename
4674506
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