• DocumentCode
    3380650
  • Title

    Single event upset immune latch circuit design using C-element

  • Author

    Rajaei, Ramin ; Tabandeh, Mahmoud ; Rashidian, Bizhan

  • Author_Institution
    Dept. of Electr. Eng., Sharif Univ. of Technol., Tehran, Iran
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    252
  • Lastpage
    255
  • Abstract
    Downscaling trend in CMOS technology on the one hand and reducing supply voltage of the circuits on the other hand, make devices more susceptive to soft errors such as SEU. Latch circuits are prone to be affected by SEUs. In this article, we propose a new circuit design of latch using redundancy with the aim of immunity against SEUs. According to simulation results, our design not only guaranties full immunity, but also has the advantage of occupying less area and consuming much less power and performance penalty in comparison with other SEU immune latches. The simulation results show that our solution has 65.76% reduction in power and about 50.65% reduction in propagation delay in comparison with TMR-latch.
  • Keywords
    CMOS integrated circuits; flip-flops; integrated circuit design; radiation effects; C-element; CMOS technology; redundancy; single event upset immune latch circuit design; soft errors; Clocks; Equations; Latches; Nickel; Tunneling magnetoresistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2011 IEEE 9th International Conference on
  • Conference_Location
    Xiamen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-61284-192-2
  • Electronic_ISBN
    2162-7541
  • Type

    conf

  • DOI
    10.1109/ASICON.2011.6157169
  • Filename
    6157169