DocumentCode
3380650
Title
Single event upset immune latch circuit design using C-element
Author
Rajaei, Ramin ; Tabandeh, Mahmoud ; Rashidian, Bizhan
Author_Institution
Dept. of Electr. Eng., Sharif Univ. of Technol., Tehran, Iran
fYear
2011
fDate
25-28 Oct. 2011
Firstpage
252
Lastpage
255
Abstract
Downscaling trend in CMOS technology on the one hand and reducing supply voltage of the circuits on the other hand, make devices more susceptive to soft errors such as SEU. Latch circuits are prone to be affected by SEUs. In this article, we propose a new circuit design of latch using redundancy with the aim of immunity against SEUs. According to simulation results, our design not only guaranties full immunity, but also has the advantage of occupying less area and consuming much less power and performance penalty in comparison with other SEU immune latches. The simulation results show that our solution has 65.76% reduction in power and about 50.65% reduction in propagation delay in comparison with TMR-latch.
Keywords
CMOS integrated circuits; flip-flops; integrated circuit design; radiation effects; C-element; CMOS technology; redundancy; single event upset immune latch circuit design; soft errors; Clocks; Equations; Latches; Nickel; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location
Xiamen
ISSN
2162-7541
Print_ISBN
978-1-61284-192-2
Electronic_ISBN
2162-7541
Type
conf
DOI
10.1109/ASICON.2011.6157169
Filename
6157169
Link To Document