DocumentCode
3380679
Title
Gallium arsenide and silicon for optical electronics: applications and technology trade-offs
Author
Swartz, Robert G.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
fYear
1991
fDate
22-24 May 1991
Firstpage
389
Lastpage
393
Abstract
Compound semiconductor technology has enjoyed astonishing successes recently, and is quickly finding its way into the consumer area. But silicon bipolar technology stands newly rejuvenated, while CMOS continues to improve its performance and consume ever more market share. Nowhere is this contest more clearly evident than in optical communications. Here applications demand performance ranging from a few hundreds of Megahertz to multi-Gigahertz, from circuits containing anywhere from tens to tens of thousands of devices. This talk reviews the high performance electronics found in optical communication applications from a technology standpoint, illustrating merits, demerits and market trends for these competing, yet often complementary IC technologies
Keywords
integrated circuit technology; integrated optoelectronics; optical communication equipment; GaAs; IC technologies; Si; gallium arsenide technology; market trends; optical communications; optical electronics; silicon technology; technology trade-offs; CMOS technology; Consumer electronics; Gallium arsenide; High speed optical techniques; Integrated circuit technology; Optical fiber communication; Optical receivers; Optical transmitters; Repeaters; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location
Taipei
ISSN
1524-766X
Print_ISBN
0-7803-0036-X
Type
conf
DOI
10.1109/VTSA.1991.246725
Filename
246725
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