• DocumentCode
    3380679
  • Title

    Gallium arsenide and silicon for optical electronics: applications and technology trade-offs

  • Author

    Swartz, Robert G.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • fYear
    1991
  • fDate
    22-24 May 1991
  • Firstpage
    389
  • Lastpage
    393
  • Abstract
    Compound semiconductor technology has enjoyed astonishing successes recently, and is quickly finding its way into the consumer area. But silicon bipolar technology stands newly rejuvenated, while CMOS continues to improve its performance and consume ever more market share. Nowhere is this contest more clearly evident than in optical communications. Here applications demand performance ranging from a few hundreds of Megahertz to multi-Gigahertz, from circuits containing anywhere from tens to tens of thousands of devices. This talk reviews the high performance electronics found in optical communication applications from a technology standpoint, illustrating merits, demerits and market trends for these competing, yet often complementary IC technologies
  • Keywords
    integrated circuit technology; integrated optoelectronics; optical communication equipment; GaAs; IC technologies; Si; gallium arsenide technology; market trends; optical communications; optical electronics; silicon technology; technology trade-offs; CMOS technology; Consumer electronics; Gallium arsenide; High speed optical techniques; Integrated circuit technology; Optical fiber communication; Optical receivers; Optical transmitters; Repeaters; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
  • Conference_Location
    Taipei
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-0036-X
  • Type

    conf

  • DOI
    10.1109/VTSA.1991.246725
  • Filename
    246725