Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures

Author

Reier, F.W. ; Bornholdt, C. ; Hoffmann, D. ; Kappe, F. ; Mörl, L.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

404

Lastpage

407

Abstract

In this work we have investigated the MOVPE growth of multi-period InGaAsP/InP quantum confined Stark effect (QCSE) layer structures and provide evidence that the QCSE response can be influenced by optimizing the gas exchange procedure, mainly to minimize carry-over effects. Secondly, we present new results on the thermal stability behaviour of these MQW structures which appear to be strongly related with the underlying buffer layer and substrate material

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; quantum confined Stark effect; semiconductor growth; semiconductor quantum wells; substrates; thermal stability; vapour phase epitaxial growth; InGaAsP-InP; MOVPE growth conditions; MQW structures; buffer layer; carry-over effects; gas exchange procedure; multi-period InGaAsP/InP MQW structures; quantum confined Stark effect; structural quality; substrate parameters; thermal stability; Epitaxial growth; Epitaxial layers; Indium phosphide; Performance evaluation; Quantum well devices; Spectroscopy; Substrates; Thermal stability; Waveguide components; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492268

Filename

492268