Title :
Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures
Author :
Reier, F.W. ; Bornholdt, C. ; Hoffmann, D. ; Kappe, F. ; Mörl, L.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
In this work we have investigated the MOVPE growth of multi-period InGaAsP/InP quantum confined Stark effect (QCSE) layer structures and provide evidence that the QCSE response can be influenced by optimizing the gas exchange procedure, mainly to minimize carry-over effects. Secondly, we present new results on the thermal stability behaviour of these MQW structures which appear to be strongly related with the underlying buffer layer and substrate material
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; quantum confined Stark effect; semiconductor growth; semiconductor quantum wells; substrates; thermal stability; vapour phase epitaxial growth; InGaAsP-InP; MOVPE growth conditions; MQW structures; buffer layer; carry-over effects; gas exchange procedure; multi-period InGaAsP/InP MQW structures; quantum confined Stark effect; structural quality; substrate parameters; thermal stability; Epitaxial growth; Epitaxial layers; Indium phosphide; Performance evaluation; Quantum well devices; Spectroscopy; Substrates; Thermal stability; Waveguide components; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492268
