Title :
Electrically controlled gain modulation for active mode locking of far-infrared p-Ge hot hole lasers
Author :
Strijbos, R.C. ; Muravjov, A.V. ; Blok, J.H. ; Hovenier, J.N. ; Lok, J.G.S. ; Pavlov, S.G. ; Schouten, R.N. ; Shastin, V.N. ; Wenckebach, W. Th
Author_Institution :
Fac. of Appl. Phys., Delft Univ. of Technol., Netherlands
Abstract :
The feasibility of achieving active mode locking in p-Ge hot-hole far-infrared lasers by gain modulation is investigated. The gain is modulated locally by applying an additional radio frequency electric field along the magnetic field direction.
Keywords :
electro-optical modulation; elemental semiconductors; germanium; hot carriers; laser mode locking; laser transitions; population inversion; semiconductor lasers; submillimetre wave lasers; Ge; active mode locking; additional radio frequency electric field; electrically controlled gain modulation; far-infrared p-Ge hot hole lasers; magnetic field direction; Hot carriers; Laser mode locking; Laser theory; Optical control; Optical pumping; Optical resonators; Optical scattering; Optical sensors; Phonons; Radio frequency;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553748
