DocumentCode :
3380755
Title :
Al/Si back contact with improved resistivity and contact resistance by an optimized RTP temperature-time profile
Author :
Muehlbauer, M. ; Gazuz, V. ; Auer, R. ; Mueller, T. ; Fahrner, W.R.
Author_Institution :
Bavarian Center for Applied Energy Research (ZAE Bayern), Am Weichselgarten 7, 91058 Erlangen, Germany
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
5
Abstract :
An innovative solar cell concept based on bonding silicon wafer to a supporting glass was presented in [1]. The bonding is achieved with aluminum and by means of an RTP step.
Keywords :
Aluminum alloys; Conductivity; Contact resistance; Cooling; Electrical resistance measurement; Glass; Photovoltaic cells; Silicon alloys; Transmission line measurements; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922681
Filename :
4922681
Link To Document :
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