Title :
A 0.5 μm diode load 4 Mb SRAM technology using double-level Al plug metal process
Author :
Sundaresan, R. ; Wei, C.C. ; Zamanian, M. ; Chen, F.S. ; Miller, R.O. ; Hodges, R.L. ; Gaskins, W. ; Sagarwala, P. ; Nguyen, L. ; Huang, J. ; Spinner, C. ; Stagaman, G.S. ; Lu, L. ; Lin, Y.S. ; Bryant, F. ; Liou, F.T.
Author_Institution :
Sgs-Thomson Microelectron., Carrollton, TX, USA
Abstract :
A 4 Mb SRAM technology using 0.5 μm transistors with 12.5 nm gate oxide, TiN local interconnection, polysilicon diode loads, and Al plug double level metallization is described. The use of diode load yields TΩ polysilicon resistors whose values are nearly independent of geometry. Complete filling of 0.6 μm contacts and vias are obtained using Al plug metallization
Keywords :
SRAM chips; integrated circuit technology; metallisation; 0.5 micron; 4 Mbit; SRAM technology; TiN local interconnection; contact filling; double level metallization; double-level Al plug metal process; gate oxide; polysilicon diode loads; polysilicon resistors; Aluminum; Current measurement; Diodes; Filling; Implants; Metallization; Plugs; Random access memory; Resistors; Tin;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246731
