Title :
A novel multi-finger layout strategy for GGnMOS ESD protection device
Author :
Zhang, Peng ; Wang, Yuan ; Jia, Song ; Zhang, Xing
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Abstract :
A novel layout strategy for on-chip ESD protection application is presented to solve the non-uniformity turn-on phenomenon of multi-finger gate-grounded nMOS (GGnMOS). The multi-finger gates as well as drains and sources are connected in serrate type. The whole multi-finger device acts as singer finger with large gate width. After realized in 0.13μm craft and tested under TLP method, the It2 per unit channel width of the novel GGnMOSs are much higher than those of the traditional GGnMOSs by this simply approach.
Keywords :
MOS integrated circuits; electrostatic discharge; integrated circuit layout; GGnMOS ESD protection device; TLP method; gate width; multifinger device; multifinger gate-grounded nMOS; multifinger gates; multifinger layout strategy; nonuniformity turn-on phenomenon; on-chip ESD protection application; serrate type; singer finger; Fingers; Integrated circuits; MOSFET circuits; Nonhomogeneous media; Robustness;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157175
