Solidly mounted resonator based on aluminum nitride thin film

Author

Dubois, M.-A. ; Muralt, Paul ; Matsumoto, Hirokazu ; Plessky, V.

Author_Institution

Lab. de Ceramique, Swiss Fed. Inst. of Technol., Lausanne, Switzerland

Volume

1

fYear

1998

fDate

1998

Firstpage

909

Abstract

A piezoelectric thin film sandwiched between two conductors is the basic structure for high frequency bulk acoustic wave devices. For that purpose, AlN thin films deposited by DC reactive sputtering on various electrode materials were investigated. Highly c-axis oriented thin films as thick as 2 μm were grown and analyzed. Intrinsic stress values ranging from strong compression to high tension were observed and piezoelectric d_33,f coefficients up to 3.9 pm/V were measured. Solidly mounted resonators with a 10-layer acoustic reflector have been fabricated. They exhibited a pronounced resonance peak centered at 2 GHz with a high Q factor and a k² coupling coefficient of 1%. These characteristics are discussed as a function of the processing conditions and the thin film properties

Keywords

Q-factor; aluminium compounds; bulk acoustic wave devices; crystal resonators; internal stresses; piezoelectric thin films; sputtered coatings; 2 GHz; AlN; DC reactive sputtering; Q-factor; aluminum nitride thin film; bulk acoustic wave device; electrode; electromechanical coupling coefficient; intrinsic stress; multilayer acoustic reflector; piezoelectric coefficient; solidly mounted resonator; Aluminum nitride; Bulk acoustic wave devices; Conducting materials; Conductive films; Electrodes; Frequency; Piezoelectric films; Sputtering; Stress; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE

Conference_Location

Sendai

ISSN

1051-0117

Print_ISBN

0-7803-4095-7

Type

conf

DOI

10.1109/ULTSYM.1998.762291

Filename

762291