DocumentCode :
3380822
Title :
Current status and future prospect of Phase Change Memory
Author :
Kim, Byeungchul ; Song, Yoonjong ; Ahn, Dongho ; Kang, YounSeon ; Jeong, Hoon ; Dongho Ahn ; Nam, Seokwoo ; Jeong, Gitae ; Chung, Chilhee
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
279
Lastpage :
282
Abstract :
This paper reviews recent progress and future outlook of PRAM as a promising candidate for emerging non-volatile memory. Electrical characteristics and reliability issues of PRAM with scale-down of the device dimension are discussed. Despite remarkable progress of PRAM properties in recent last decades, there are still several fundamental issues to resolve for broadening its application area. Several suggestions to overcome these property issues are introduced with recent experimental results.
Keywords :
circuit reliability; phase change memories; PRAM; electrical characteristic; nonvolatile memory; phase change memory; reliability; Nonvolatile memory; Phase change random access memory; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
ISSN :
2162-7541
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
Type :
conf
DOI :
10.1109/ASICON.2011.6157176
Filename :
6157176
Link To Document :
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