Experimental Study of a Novel Silicon Carbide MEMS Ignition Device

This paper presents a robust, low power MEMS igniter built using low pressure chemical vapor deposited (LPCVD) polycrystalline Silicon Carbide films. The MEMS igniter design is based on a 5 mum thick, low stress membrane composed of doped and undoped SiC layers making up the resistive heaters and passivation layer respectively. Experimental tests using an optical pyrometer to measure temperature indicate that this igniter can achieve temperatures beyond 1400degC, with less than 10 W power input, and a time response of less than 0.1 sec. Reliability tests were performed to characterize the igniter behavior as a function of time and determine the lifetime of the devices. Lifetime of the igniter at temperatures greater than 1300degC was limited due to the growth of unstable crystobalite oxide layers resulting in membrane fracture. Reliability significantly improved when operation of the igniter was limited to temperatures below 1 100degC.