DocumentCode :
338083
Title :
Even-order thickness-shear mode resonators using X-cut LiTaO3 plates realized by a direct bonding technique
Author :
Sugimoto, M. ; Takeda, K. ; Ohtsuchi, T. ; Tomita, Y. ; Kawasaki, O.
Author_Institution :
Device Eng. Dev. Centre, Matsushita Electr. Ind. Co. Ltd., Kadoma, Japan
Volume :
1
fYear :
1998
fDate :
1998
Firstpage :
919
Abstract :
Even-order thickness-shear mode resonators with good temperature characteristics have been achieved by applying direct-bonding techniques to X-cut LiTaO3 single crystals. The variations in the resonance frequency of their main fast thickness shear mode was less than 500 ppm over the temperature range of -10 to 60°C. Moreover, the results of studies on strip type chip resonators using direct-bonded x-cut LiTaO3 wafers suggest that fabrication of small sized resonators with no spurious response is feasible. Their typical Q-value was between 3000 and 5000, and the resonant resistance was 10-20 Ω at 13 MHz. These values an ideal for a range of applications. We confirmed that the direct bonding technique was particularly suitable for realizing high frequency resonators because the thickness of the resonator could be double that of a conventional fundamental resonator
Keywords :
Q-factor; crystal resonators; lithium compounds; -10 to 60 C; 13 MHz; LiTaO3; Q-factor; X-cut LiTaO3 plate; direct bonding; even-order thickness-shear mode resonator; fabrication; piezoelectric single crystal; resonance frequency; strip type chip resonator; temperature characteristics; Crystals; Fabrication; Ferroelectric materials; Piezoelectric polarization; Power harmonic filters; Resonance; Resonant frequency; Tellurium; Temperature; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE
Conference_Location :
Sendai
ISSN :
1051-0117
Print_ISBN :
0-7803-4095-7
Type :
conf
DOI :
10.1109/ULTSYM.1998.762293
Filename :
762293
Link To Document :
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