• DocumentCode
    3380844
  • Title

    DRAM technology trend and prospect

  • Author

    Shichijo, Hisashi

  • Author_Institution
    Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    1991
  • fDate
    22-24 May 1991
  • Firstpage
    349
  • Lastpage
    353
  • Abstract
    With the successful development of 64 Mbit DRAMs, the pursuit for high density DRAMs continues. This talk discusses the DRAM technology trend primarily from device and circuit points of view, and examines the feasibility and requirements for the next generation 256 Mbit DRAMs
  • Keywords
    DRAM chips; integrated circuit technology; 256 Mbit; 64 Mbit; DRAM technology trend; high density DRAMs; Coupling circuits; Ferroelectric films; Flexible printed circuits; Instruments; Packaging; Power supplies; Process design; Random access memory; Regulators; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
  • Conference_Location
    Taipei
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-0036-X
  • Type

    conf

  • DOI
    10.1109/VTSA.1991.246734
  • Filename
    246734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3380844