Title :
A Dram-Like Mechanical Non-Volatile Memory
Author :
Jang, Weon Wi ; Lee, Jeong Oen ; Yoon, Jun-Bo
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Daejeon
Abstract :
A DRAM-like mechanical non-volatile memory (NVM) is newly proposed and fabricated using CMOS-compatible poly-Si surface micromachining. The key concept is developed that the proposed memory is non-volatile because the MEMS switch can clearly eliminate the leakage current when the device is off. The mechanical NVM shows excellent on-off characteristics (sub-threshold swing~4 mV/decade), high switching speed (~300 kHz) and non-volatility. This paper demonstrates the feasibility of the mechanical NVM as a new memory for ULSI applications.
Keywords :
CMOS memory circuits; micromachining; microswitches; random-access storage; CMOS-compatible poly-Si surface micromachining; DRAM-like mechanical nonvolatile memory; MEMS switch; CMOS technology; Micromachining; Micromechanical devices; Microswitches; Nonvolatile memory; Random access memory; Semiconductor films; Silicon; Switches; Threshold voltage; DRAM; MEMS; mechanical NVM; non-volatile memory (NVM); surface micromachining;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location :
Lyon
Print_ISBN :
1-4244-0842-3
Electronic_ISBN :
1-4244-0842-3
DOI :
10.1109/SENSOR.2007.4300601
