DocumentCode :
3380945
Title :
A 55nm ultra high density two-port register file compiler with improved write replica technique
Author :
Zhang, Zhao-Yong ; Zhang, Li-Jun ; Zhang, Yi-Ping ; Huang, Rui-Feng ; Wu, Shou-Dao ; Zheng, Jian-Bin
Author_Institution :
Dept. of Memory Design, AiceStar Technol. Corp., Suzhou, China
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
303
Lastpage :
306
Abstract :
In this paper a two-port register file (RF) compiler with ultra high density design is presented. The memory implemented using a single port memory core, which is combined with a smart address selector circuit to reduce peripheral devices number and thus the silicon area is decreased significantly. The separate read and write replica scheme are implemented, with the improved write replica technique the memory compiler can accurately track the write timing over a wide range of memory array sizes and PVT variation. A test-chip with 13 embedded RF memories has been fabricated in UMC 55nm logic standard performance low-K process. The ultra high density design can markedly save 44.0% silicon area compared to conventional two-port RF (with 8T dual-port memory core) and only 4.3% area overhead compared to single-port RF (with 6T single-port memory core) for a 55nm 72Kb memory.
Keywords :
SRAM chips; compiler generators; integrated circuit design; logic circuits; replica techniques; logic standard performance low-K process; memory compiler; single port memory core; size 55 nm; smart address selector circuit; ultra high density two-port register file compiler; write replica technique; Decoding; Foundries; Radio frequency; Register file compiler; address selector; replica technique; self-timed write; two-port memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
ISSN :
2162-7541
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
Type :
conf
DOI :
10.1109/ASICON.2011.6157182
Filename :
6157182
Link To Document :
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