Title :
Two simultaneous wavelength and ultrahigh repetition rate operation of a harmonically injection locked diode laser
Author :
Margalit, M. ; Orenstein, M. ; Eisenstein, G. ; Portnoi, E.L. ; Venus, G.B. ; Khazan, A.A.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
Dual harmonic injection locking of a passively mode-locked diode laser yielded a simultaneous emission of two /spl sim/100 GHz pulse trains at two different wavelengths. High pulse rates exceeding /spl sim/900 GHz were obtained using a single locking source. The passively mode-locked diode laser was a Fabry-Perot laser based on a InGaAs/InGaAsP multiple quantum well layer structure operating near 1540 nm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; quantum well lasers; 100 GHz; 1540 nm; 900 GHz; Fabry-Perot laser; InGaAs-InGaAsP; InGaAs/InGaAsP multiple quantum well layer structure; dual harmonic injection locking; harmonically injection locked diode laser; high pulse rates; passively mode-locked diode laser; pulse trains; single locking source; two simultaneous wavelength operation; ultrahigh repetition rate operation; Autocorrelation; Books; Diode lasers; Injection-locked oscillators; Laser mode locking; Laser theory; Milling machines; Optical harmonic generation; Optical pulses; Optimized production technology;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553749
