Title :
Understanding and modeling AC BTI
Author :
Reisinger, Hans ; Grasser, Tibor ; Ermisch, Karsten ; Nielen, Heiko ; Gustin, Wolfgang ; Schlünder, Christian
Author_Institution :
Infineon Technol., Neubiberg, Germany
Abstract :
We present a model for AC NBTI which is based on capture and emission of charges in and out of oxide border traps. Capture and emission time constants of these traps are widely distributed from >;μs to >;105s and have been experimentally determined. The model gives a good quantitative understanding of experimental data from alternating stress / recovery sequences. It also provides a physical understanding of all the special features seen in AC NBTI independently of technology parameters.
Keywords :
field effect transistors; stability; AC NBTI; AC stress; emission time constants; negative bias temperature instability; oxide border traps; recovery; Degradation; Delay; Filling; Frequency dependence; Frequency measurement; Stress; Stress measurement; AC-stress; NBTI; recovery;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784542
