Title :
Channel mobility of GeSi quantum-well P-MOSFETs
Author :
Nayak, D.K. ; Woo, J.C.S. ; Park, J.S. ; Wang, J. C L ; MacWilliams, K.P.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
The results of channel mobility of a GeSi quantum-well PMOS from 8 K to 300 K are presented. As the temperature is lowered below 25 K, the field effect channel mobility sharply increases with lowering of the temperature. The mobility at 8 K is found to be 3 times higher than that at 25 K. At very low temperature (~10 K), the transition of channel transconductance with gate voltage from a high (GeSi channel) to a low (surface channel) value has been clearly observed
Keywords :
Ge-Si alloys; carrier mobility; insulated gate field effect transistors; semiconductor quantum wells; 8 to 300 K; GexSi1-x-Si; Si; channel mobility; channel transconductance; gate voltage; quantum-well P-MOSFET; surface channel; FET integrated circuits; Fabrication; Germanium silicon alloys; MOSFET circuits; Quantum wells; Rapid thermal annealing; Silicon germanium; Temperature; Threshold voltage; Transconductance;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246744
