Title :
Accurate parametric interconnect modeling for high frequency LSI/VLSI circuits and systems
Author :
Lin-Hendel, C.G. ; Loos, J. ; Thornber, K.K.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Accurate models for LSI/VLSI interconnect lines at various high frequency ranges are derived and presented. Elmore/Sakurai RC model for delay time is verified for frequencies of tens to low hundreds of MHz. Resistive transmission line effect is formulated to include parasitic capacitance, inductance, resistance, and the skin-depth effect caused frequency dependence of line resistance up to tens of GHz
Keywords :
VLSI; large scale integration; metallisation; semiconductor process modelling; Elmore/Sakurai RC model; LSI/VLSI circuits; delay time; frequency dependence; interconnect lines; line resistance; parametric interconnect modeling; parasitic capacitance; parasitic inductance; parasitic resistance; skin-depth effect; Circuits and systems; Conductors; Frequency; Inductance; Integrated circuit interconnections; Large scale integration; Parasitic capacitance; Transfer functions; Very large scale integration; Wiring;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246750
