DocumentCode
3381153
Title
Accurate parametric interconnect modeling for high frequency LSI/VLSI circuits and systems
Author
Lin-Hendel, C.G. ; Loos, J. ; Thornber, K.K.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
fYear
1991
fDate
22-24 May 1991
Firstpage
403
Lastpage
408
Abstract
Accurate models for LSI/VLSI interconnect lines at various high frequency ranges are derived and presented. Elmore/Sakurai RC model for delay time is verified for frequencies of tens to low hundreds of MHz. Resistive transmission line effect is formulated to include parasitic capacitance, inductance, resistance, and the skin-depth effect caused frequency dependence of line resistance up to tens of GHz
Keywords
VLSI; large scale integration; metallisation; semiconductor process modelling; Elmore/Sakurai RC model; LSI/VLSI circuits; delay time; frequency dependence; interconnect lines; line resistance; parametric interconnect modeling; parasitic capacitance; parasitic inductance; parasitic resistance; skin-depth effect; Circuits and systems; Conductors; Frequency; Inductance; Integrated circuit interconnections; Large scale integration; Parasitic capacitance; Transfer functions; Very large scale integration; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location
Taipei
ISSN
1524-766X
Print_ISBN
0-7803-0036-X
Type
conf
DOI
10.1109/VTSA.1991.246750
Filename
246750
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