• DocumentCode
    3381177
  • Title

    In-situ ellipsometric analysis of the photofixing of Volatile Contaminant Materials

  • Author

    Ianno, N.J. ; Thompson, D.W.

  • Author_Institution
    Department of Electrical Engineering, University of Nebraska, Lincoln, 68588-0511, USA
  • fYear
    2008
  • fDate
    11-16 May 2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The outgassing and deposition of Volatile Condensable Materials (VCM´s) onto optically-sensitive surfaces of satellites is of significant interest to spacecraft-contamination engineers. The effluent of RTV CV-2568 has been photofixed onto a temperature controlled glass substrate with a 90 nm MgF2 anti reflection layer deposited on the surface. The deposition/photofixing has been monitored in-situ by both quartz crystal microbalances placed near the substrate and transmission spectroscopic ellipsometry taken directly on the depositing film. We will show the deposition rate under one sun of illumination as a function of impingement rate at −40 C saturates at approximately 1nm/24 hours, for an impingement rate of approximately ten times the deposition rate. Impingement rates higher than this value place the process in the photon flux limited regime, while rates at or below this value place the process in the flux limited regime. Our results indicate deposition is driven by photons of wavelength greater than 250nm, while darkening of the film is driven by photons of wavelength shorter than 250nm. We will present the optical constants, n and k, for the photofixed film. Finally, the activation energy for the deposition process can also be extracted by measuring the deposition rate as a function of substrate temperature.
  • Keywords
    Aerospace engineering; Effluents; Optical films; Optical materials; Optical saturation; Optical surface waves; Satellites; Substrates; Surface contamination; Temperature control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-1640-0
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2008.4922701
  • Filename
    4922701