Title :
A charge transport based acceleration model for interlevel dielectric breakdown
Author :
Achanta, Ravi ; McLaughlin, Paul
Author_Institution :
IBM Syst.&Technol. Group, Hopewell Jn, VA, USA
Abstract :
A charge transport model has been applied to predict interlevel dielectric breakdown in copper interconnects. The model very accurately predicts the lifetimes of dense and porous dielectrics at long times. The predictions of the model vary significantly from currently available methodologies which fail to adequately account for copper charge transport. The results have important implications for the reliability of advanced microprocessors with copper interconnects.
Keywords :
copper; electric breakdown; integrated circuit interconnections; microprocessor chips; reliability; acceleration model; advanced microprocessors; copper charge transport; copper interconnects; dense dielectrics; interlevel dielectric breakdown; porous dielectrics; reliability; Breakdown voltage; Copper; Data models; Dielectrics; Ions; Mathematical model; Predictive models; charge transport; copper interconnects; dielectric breakdown; predictive model;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784553
