A model for post-CMP cleaning effect on TDDB

Author

Hsu, Chia-Lin ; Lin, Wen-Chin ; Tsai, Teng-Chun ; Huang, Climbing ; Wu, J.-Y.

Author_Institution

United Microelectron. Corp., Tainan, Taiwan

fYear

2011

fDate

10-14 April 2011

Abstract

For 45 nm and beyond, direct polished porous type ultra low-K film (ULK) is integrated in Cu interconnects. Post-cleaning of Cu CMP effect on Time dependent dielectric breakdown (TDDB) was investigated. Cu ions remaining on dielectrics and Cu roughness are found as two dominate factors at different clean time region. High Cu roughness induced capping layer seam results in the degradation of TDDB. A statistical model, said weak element model, was proposed to illustrate the correlation of Cu roughness on TDDB as well.

Keywords

VLSI; chemical mechanical polishing; copper; electric breakdown; integrated circuit interconnections; integrated circuit modelling; low-k dielectric thin films; statistical analysis; surface cleaning; surface roughness; Cu; Cu CMP effect; Cu interconnects; TDDB; VLSI circuits; capping layer; direct polished porous type ultra low-k film; post-CMP cleaning effect; size 45 nm; statistical model; time dependent dielectric breakdown; weak element model; Cleaning; Copper; Correlation; Dielectrics; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784554

Filename

5784554