Title :
A model for post-CMP cleaning effect on TDDB
Author :
Hsu, Chia-Lin ; Lin, Wen-Chin ; Tsai, Teng-Chun ; Huang, Climbing ; Wu, J.-Y.
Author_Institution :
United Microelectron. Corp., Tainan, Taiwan
Abstract :
For 45 nm and beyond, direct polished porous type ultra low-K film (ULK) is integrated in Cu interconnects. Post-cleaning of Cu CMP effect on Time dependent dielectric breakdown (TDDB) was investigated. Cu ions remaining on dielectrics and Cu roughness are found as two dominate factors at different clean time region. High Cu roughness induced capping layer seam results in the degradation of TDDB. A statistical model, said weak element model, was proposed to illustrate the correlation of Cu roughness on TDDB as well.
Keywords :
VLSI; chemical mechanical polishing; copper; electric breakdown; integrated circuit interconnections; integrated circuit modelling; low-k dielectric thin films; statistical analysis; surface cleaning; surface roughness; Cu; Cu CMP effect; Cu interconnects; TDDB; VLSI circuits; capping layer; direct polished porous type ultra low-k film; post-CMP cleaning effect; size 45 nm; statistical model; time dependent dielectric breakdown; weak element model; Cleaning; Copper; Correlation; Dielectrics; Rough surfaces; Surface roughness;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784554
