Title :
Measurements of Complex Permittivity and Loss Tangent of Silicon Carbide at Millimeter Wavelengths
Author :
Afsar, Mohammed N. ; Chen, Shu ; Wang, Yong ; Sakdatorn, Darin
Author_Institution :
Dept. of Electr. & Comput. Eng., Tufts Univ., Medford, MA
Abstract :
High purity semi-insulating 4H-SiC is highly desirable for SiC MESFET and GaN HEMT based power microwave devices. With the presented measurement techniques, namely cavity-length variation technique of open resonator operating at 60GHz, together with dispersive Fourier transform spectroscopy (DFTS), we successfully carried out the precise dielectric measurements of a pair of high purity semi-insulating 4H-SiC wafer specimens. Excellent agreement was obtained between two experimental systems. Therefore, it proves the versatility and accuracy of our established measurement techniques
Keywords :
Fourier transform spectroscopy; dielectric loss measurement; dielectric resonators; permittivity measurement; silicon compounds; 60 GHz; SiC; cavity length variation; complex permittivity measurements; dispersive Fourier transform spectroscopy; loss tangent measurements; millimeter wavelengths; open resonator; Gallium nitride; HEMTs; Loss measurement; MESFETs; Measurement techniques; Millimeter wave measurements; Millimeter wave technology; Permittivity measurement; Silicon carbide; Wavelength measurement; Silicon carbide; dielectric permittivity; dispersive Fourier transform spectroscopy (DFTS); loss tangent; open resonator;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2005. IMTC 2005. Proceedings of the IEEE
Conference_Location :
Ottawa, Ont.
Print_ISBN :
0-7803-8879-8
DOI :
10.1109/IMTC.2005.1604517
