Measurements of Complex Permittivity and Loss Tangent of Silicon Carbide at Millimeter Wavelengths

Author

Afsar, Mohammed N. ; Chen, Shu ; Wang, Yong ; Sakdatorn, Darin

Author_Institution

Dept. of Electr. & Comput. Eng., Tufts Univ., Medford, MA

Volume

3

fYear

2005

fDate

16-19 May 2005

Firstpage

1975

Lastpage

1978

Abstract

High purity semi-insulating 4H-SiC is highly desirable for SiC MESFET and GaN HEMT based power microwave devices. With the presented measurement techniques, namely cavity-length variation technique of open resonator operating at 60GHz, together with dispersive Fourier transform spectroscopy (DFTS), we successfully carried out the precise dielectric measurements of a pair of high purity semi-insulating 4H-SiC wafer specimens. Excellent agreement was obtained between two experimental systems. Therefore, it proves the versatility and accuracy of our established measurement techniques

Keywords

Fourier transform spectroscopy; dielectric loss measurement; dielectric resonators; permittivity measurement; silicon compounds; 60 GHz; SiC; cavity length variation; complex permittivity measurements; dispersive Fourier transform spectroscopy; loss tangent measurements; millimeter wavelengths; open resonator; Gallium nitride; HEMTs; Loss measurement; MESFETs; Measurement techniques; Millimeter wave measurements; Millimeter wave technology; Permittivity measurement; Silicon carbide; Wavelength measurement; Silicon carbide; dielectric permittivity; dispersive Fourier transform spectroscopy (DFTS); loss tangent; open resonator;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 2005. IMTC 2005. Proceedings of the IEEE

Conference_Location

Ottawa, Ont.

Print_ISBN

0-7803-8879-8

Type

conf

DOI

10.1109/IMTC.2005.1604517

Filename

1604517