DocumentCode
3381349
Title
The Effect of Substrate Doping on the Behaviour of a CMOS Electrothermal Frequency-Locked-Loop
Author
Zhang, C. ; Makinwa, K.A.A.
Author_Institution
Delft Univ. of Technol., Delft
fYear
2007
fDate
10-14 June 2007
Firstpage
2283
Lastpage
2286
Abstract
A CMOS electrothermal frequency-locked-loop (FLL) is presented, whose output frequency is determined by the temperature-dependent thermal diffusivity of the silicon substrate. Measurements show that this temperature dependence is essentially process independent. After a batch calibration, the electrothermal FLL has an untrimmed inaccuracy of less than plusmn0.7degC (3sigma) over the temperature range -40degC to 100degC.
Keywords
CMOS integrated circuits; frequency locked loops; thermal diffusion; CMOS electrothermal frequency-locked-loop; batch calibration; silicon substrate; substrate doping effect; temperature-dependent thermal diffusivity; Aluminum; Doping; Electrothermal effects; Filters; Frequency locked loops; Silicon; Temperature dependence; Temperature sensors; Thermal sensors; Voltage-controlled oscillators; Electrothermal FLL; Electrothermal filter; Thermal diffusivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location
Lyon
Print_ISBN
1-4244-0842-3
Electronic_ISBN
1-4244-0842-3
Type
conf
DOI
10.1109/SENSOR.2007.4300625
Filename
4300625
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