Large-signal modeling and characterization of a plastic packaged HBT for use in wireless portable units

Author

Wu, Der-Woei ; Henderson, Gregory N.

Author_Institution

Corp. Res. & Dev. Centre, M/A-COM Inc., Lowell, MA, USA

fYear

1995

fDate

2-4 Oct 1995

Firstpage

166

Lastpage

168

Abstract

A method is presented for the extraction of an accurate large-signal model for plastic-packaged GaAs HBTs. The packaged device model is extracted by a combination of DC and small-signal on-wafer characterization of the chip device and small-signal characterization of short and open package structures through on-wafer probing of ceramic launchers to the package. The technique has been applied to M/A-COM´s 32-finger HBT in an SOT-89 package; the resulting model shows excellent agreement with large-signal measurements for the packaged device, predicting the power and gain within 0.5 dB for a wide range of input power drive and device biases

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; land mobile radio; mobile radio; plastic packaging; power bipolar transistors; radio equipment; semiconductor device models; semiconductor device packaging; GaAs; M/A-COM; SOT-89; ceramic launchers; large-signal model; multifinger HBT; on-wafer probing; plastic package; wireless portable units; Ceramics; Electronics packaging; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Plastic packaging; Power measurement; Research and development; Scattering parameters; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging, 1995

Conference_Location

Portland, OR

Print_ISBN

0-7803-3034-X

Type

conf

DOI

10.1109/EPEP.1995.524884

Filename

524884