• DocumentCode
    3381497
  • Title

    Integrated polarization-analyzing CMOS image sensor

  • Author

    Sarkar, Mukul ; Bello, David San Segundo ; Van Hoof, Chris ; Theuwissen, Albert

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2010
  • fDate
    May 30 2010-June 2 2010
  • Firstpage
    621
  • Lastpage
    624
  • Abstract
    A CMOS image sensor with an integrated wire grid polarizer to sense the polarization of light is presented. The chip consists of an array of 128 by 128 pixels, it occupies an area of 5×4 mm2 and it has been designed and fabricated in a CMOS 180nm process. Extinction ratio of 6.3 and 7.7 were achieved. The sensor is used to classify materials based on the degree of polarization and the transmitted intensity after specular reflection on the material surface. The variation in the transmitted intensity among dielectrics and metals was successfully demonstrated.
  • Keywords
    CMOS image sensors; light polarisation; CMOS process; integrated polarization-analyzing CMOS image sensor; integrated wire grid polarizer; material surface; specular reflection; transmitted intensity; CMOS image sensors; CMOS technology; Dielectric materials; Extinction ratio; Filters; Image sensors; Optical polarization; Optical reflection; Sensor arrays; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-5308-5
  • Electronic_ISBN
    978-1-4244-5309-2
  • Type

    conf

  • DOI
    10.1109/ISCAS.2010.5537516
  • Filename
    5537516