DocumentCode
3381497
Title
Integrated polarization-analyzing CMOS image sensor
Author
Sarkar, Mukul ; Bello, David San Segundo ; Van Hoof, Chris ; Theuwissen, Albert
Author_Institution
IMEC, Leuven, Belgium
fYear
2010
fDate
May 30 2010-June 2 2010
Firstpage
621
Lastpage
624
Abstract
A CMOS image sensor with an integrated wire grid polarizer to sense the polarization of light is presented. The chip consists of an array of 128 by 128 pixels, it occupies an area of 5×4 mm2 and it has been designed and fabricated in a CMOS 180nm process. Extinction ratio of 6.3 and 7.7 were achieved. The sensor is used to classify materials based on the degree of polarization and the transmitted intensity after specular reflection on the material surface. The variation in the transmitted intensity among dielectrics and metals was successfully demonstrated.
Keywords
CMOS image sensors; light polarisation; CMOS process; integrated polarization-analyzing CMOS image sensor; integrated wire grid polarizer; material surface; specular reflection; transmitted intensity; CMOS image sensors; CMOS technology; Dielectric materials; Extinction ratio; Filters; Image sensors; Optical polarization; Optical reflection; Sensor arrays; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location
Paris
Print_ISBN
978-1-4244-5308-5
Electronic_ISBN
978-1-4244-5309-2
Type
conf
DOI
10.1109/ISCAS.2010.5537516
Filename
5537516
Link To Document