S-parameter analysis of flip-chip transitions

Author

Vahldieck, R. ; Jin, H.

Author_Institution

Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada

fYear

1995

fDate

2-4 Oct 1995

Firstpage

175

Lastpage

177

Abstract

Flip-chip interconnections are attractive for high density packaging of MMIC and optoelectronic modules. In this paper we investigate the electrical performance of flip-chip transitions between two coplanar waveguides in the presence of a short-circuited ground plane of either the CPW on the motherboard side or on the chip side. The method of analysis is based on the frequency-domain TLM approach which provides a rigorous field theoretical treatment of this type of discontinuity

Keywords

S-parameters; coplanar waveguides; flip-chip devices; frequency-domain analysis; integrated circuit interconnections; integrated circuit packaging; transmission line matrix methods; waveguide discontinuities; MMIC; S-parameter analysis; coplanar waveguides; discontinuity; electrical performance; flip-chip transitions; frequency-domain TLM; high density packaging; interconnections; optoelectronic modules; short-circuited ground plane; Bonding; Conductors; Coplanar waveguides; Fourier transforms; Frequency domain analysis; Integrated circuit interconnections; Microstrip; Printed circuits; Scattering parameters; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging, 1995

Conference_Location

Portland, OR

Print_ISBN

0-7803-3034-X

Type

conf

DOI

10.1109/EPEP.1995.524886

Filename

524886