32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit

Author

Thomas, O. ; Noel, J.-P. ; Fenouillet-Beranger, C. ; Jaud, M.-A. ; Dura, J. ; Perreau, P. ; Boeuf, F. ; Andrieu, F. ; Delprat, D. ; Boedt, F. ; Bourdelle, K. ; Nguyen, B.Y. ; Vladimirescu, A. ; Amara, A.

Author_Institution

CEA/LETI, MINATEC, Grenoble, France

fYear

2010

fDate

May 30 2010-June 2 2010

Firstpage

1703

Lastpage

1706

Abstract

A low-cost and high-manufacturability Multi-V_T Ultra-Thin BOX and Body (UT2B) FDSOI technology is proposed for high-performance and low-leakage digital circuits. This concept allows setting up low, standard and high threshold voltage (V_T) devices without degrading the good channel electrostatic control and the low V_T dispersion of the FDSOI technology. Device electrical characteristics, process flow and physical design are described and the performance of digital circuits is evaluated.

Keywords

digital circuits; network synthesis; silicon-on-insulator; UT2B-FDSOI technology; box FDSOI; channel electrostatic control; device electrical characteristics; high threshold voltage devices; high-manufacturability multiV_T ultra-thin box and body FDSOI technology; low V_T dispersion; low-leakage digital circuits; multiV_T ultra-thin body; physical design; process flow; size 32 nm; CMOS technology; Circuit optimization; Degradation; Dielectric thin films; Digital circuits; Doping; Electrostatics; Leakage current; Ring oscillators; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Conference_Location

Paris

Print_ISBN

978-1-4244-5308-5

Electronic_ISBN

978-1-4244-5309-2

Type

conf

DOI

10.1109/ISCAS.2010.5537517

Filename

5537517