DocumentCode
3381633
Title
Research on electromechanical model of micro-accelerometer based on SOI technology
Author
Qian, Keqiang ; Luo, Wen ; Yu, Qi
Author_Institution
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2011
fDate
25-28 Oct. 2011
Firstpage
433
Lastpage
436
Abstract
To cope with the imprecise model of electro-mechanical integration simulation and complex process of parameter extraction, a Simulink model of micro-accelerometer based on SOI technology is proposed in this paper. The model realizes the very closely results between the simulation without device-level circuits and Coventor Ware simulation. Compared with the results of experimental test, the error of voltage sensitivity is less than 2%, the error of differential capacitance sensitivity is less than 8%, and acceleration bias is less than 10%. So the model can realize the simulation of electro-mechanical integration and be helpful in fast optimization of the parameter of structure and circuits, and the model has better reference function to the research of MEMS inertial device.
Keywords
accelerometers; micromechanical devices; silicon-on-insulator; CoventorWare simulation; MEMS inertial device; SOI technology; Simulink model; acceleration bias; complex process; device-level circuits; differential capacitance sensitivity; electro-mechanical integration simulation; electromechanical model; imprecise model; micro-accelerometer; parameter extraction; reference function; voltage sensitivity error; Acceleration; Equations; Silicon; Switches; Electromechanical Integration; SOI; micro-accelerometer; switched-capacitor amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location
Xiamen
ISSN
2162-7541
Print_ISBN
978-1-61284-192-2
Electronic_ISBN
2162-7541
Type
conf
DOI
10.1109/ASICON.2011.6157214
Filename
6157214
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