Title :
Temperature dependence of the programmed states in GST-based multilevel phase-change memories
Author :
Cabrini, A. ; Fantini, A. ; Gallazzi, F. ; Torelli, G.
Author_Institution :
Dept. of Electron., Univ. of Pavia, Pavia
fDate :
Aug. 31 2008-Sept. 3 2008
Abstract :
In this paper, the temperature dependence of the programmed resistance states in GST-based (GST, Ge2Sb2Te5) phase-change memories is analyzed. Memory cells were programmed over the available current range and were measured at different temperatures. The purpose was to determine a relationship between the temperature behaviour of the cell resistance and the programmed current level. Measurements were carried out in a temperature range from -10degC to 85degC, considering cells programmed to the fully crystalline and the fully amorphous state of the active GST portion, as well as cells programmed to eight intermediate current levels (i.e., levels corresponding to partial crystalline states). Experimental results allowed us to find out the dependence of the activation energy of the cell resistance variation upon the programmed state.
Keywords :
antimony compounds; germanium compounds; phase change materials; phase change memories; GST-based multilevel phase-change memories; GeSbTe; cell resistance variation; programmed states; temperature dependence; Amorphous materials; Crystalline materials; Crystallization; Current measurement; Electrical resistance measurement; Phase change materials; Phase change memory; Temperature dependence; Temperature distribution; Temperature measurement;
Conference_Titel :
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location :
St. Julien´s
Print_ISBN :
978-1-4244-2181-7
Electronic_ISBN :
978-1-4244-2182-4
DOI :
10.1109/ICECS.2008.4674822
