DocumentCode
3381687
Title
Injection locked CMOS buffer dedicated to nanomagnetic based voltage controlled oscillator
Author
Badets, F. ; Lagae, L. ; Cornelissen, S. ; Devolder, T. ; Chappert, C.
Author_Institution
STMicroelectronics, FET/CCDS/HLS-CSA, Crolles
fYear
2008
fDate
Aug. 31 2008-Sept. 3 2008
Firstpage
190
Lastpage
193
Abstract
Nanomagnetic oscillator using giant magnetoresistance seems to be candidates for the implementation of low silicon area good close-in phase noise RF oscillators. One of the big issue remains in the weak emitted power. Injection Locked Oscillator could be a solution in order to exploit the behavior of such devices.
Keywords
CMOS integrated circuits; injection locked oscillators; voltage-controlled oscillators; giant magnetoresistance; injection locked CMOS buffer; nanomagnetic based voltage controlled oscillator; phase noise RF oscillators; Frequency; Giant magnetoresistance; Injection-locked oscillators; Magnetic multilayers; Magnetic separation; Magnetization; Silicon; Torque; Tunneling magnetoresistance; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location
St. Julien´s
Print_ISBN
978-1-4244-2181-7
Electronic_ISBN
978-1-4244-2182-4
Type
conf
DOI
10.1109/ICECS.2008.4674823
Filename
4674823
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