A study of the influence of high voltage device characteristics by electron beam irradiation during nanoprobing

Author

Lin, Hung Sung

Author_Institution

United Microelectron. Corp., Ltd., Hsinchu, Taiwan

fYear

2011

fDate

10-14 April 2011

Abstract

It has been widely reported that floating gate irradiation using a charged beam can shift device parameters with the scaling of the devices [1-4]. For high voltage (HV) devices, the effects of electron beam (EB) induced damage, however, have not been reported. This paper describes how charge damage during EB exposure should also be considered for high voltage (HV) devices when scanning electron microscope (SEM) is employed for probe guidance. In this study, the effects of EB cathode potential on CMOS transistor threshold voltage and off-state current are investigated using HV, middle voltage (MV), and low voltage (LV) devices. The experimental results show that, to avoid damage, the acceleration voltage of EB should be lower.

Keywords

CMOS integrated circuits; electron beam effects; nanotechnology; scanning electron microscopy; CMOS transistor threshold voltage; EB cathode potential; EB exposure; EB induced damage; HV devices; LV devices; MV devices; SEM; acceleration voltage; charge damage; charged beam; device parameters; electron beam induced damage; electron beam irradiation; floating gate irradiation; high voltage device characteristics; high voltage devices; low voltage devices; middle voltage; nanoprobing; off-state current; probe guidance; scanning electron microscope; Degradation; Dielectrics; Electron beams; Logic gates; Radiation effects; Threshold voltage; Transistors; EB; HV; SEM; charge; damage; nanoprober;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784575

Filename

5784575