DocumentCode
3381700
Title
Detecting laser beam reflectance modulated by electronic device operation with a simple setup
Author
Pagano, Carlo ; Boit, Christian ; Yokoyama, Yoshiyuki
Author_Institution
Dept. of Semicond. Devices, Berlin Univ. of Technol., Berlin, Germany
fYear
2011
fDate
10-14 April 2011
Abstract
Modulation of reflected light intensity by electronic device operation is well established as a backside contactless probing technique. In this paper, we present a simple setup for mapping reflected light signals across semiconductor devices. In the experiment, metal-oxide-semiconductor field-effect transistors (MOSFET) were used in different operating conditions.
Keywords
MOSFET; reflectivity; MOSFET; backside contactless probing; electronic device operation; laser beam reflectance; light intensity; metal-oxide-semiconductor field-effect transistors; reflected light signals; semiconductor devices; Correlation; Logic gates; Measurement by laser beam; Modulation; Pixel; Thyristors; Transistors; Absorption coefficient; Backside techniques; Contactless measurement; Failure Analysis; Laser Voltage Probing; Reflectance; Space charge region; p-n junction;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location
Monterey, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-9113-1
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2011.5784576
Filename
5784576
Link To Document