DocumentCode
3381738
Title
Backside reflectance modulation of microscale metal interconnects
Author
Teo, J.K.J. ; Chua, C.M. ; Koh, L.S. ; Phang, J.C.H.
Author_Institution
Centre for Integrated Circuit Failure Anal. & Reliability (CICFAR), Nat. Univ. of Singapore, Singapore, Singapore
fYear
2011
fDate
10-14 April 2011
Abstract
The variation of backside reflectance modulation effects on metal line samples at different electrical bias and silicon backside thicknesses is investigated. Negative reflected intensity modulation is observed with temperature increase which is one to two orders of magnitude higher than published results. A backside reflectance model is developed to explain the experimental results.
Keywords
metallic thin films; modulation; reflectivity; silicon; backside reflectance modulation; electrical bias; microscale metal interconnects; negative reflected intensity modulation; silicon backside thicknesses; Absorption; Measurement by laser beam; Metals; Reflectivity; Silicon; Substrates; Temperature measurement; laser reflectance; metal interconnect; substrate thickness;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location
Monterey, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-9113-1
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2011.5784577
Filename
5784577
Link To Document