Title :
Backside reflectance modulation of microscale metal interconnects
Author :
Teo, J.K.J. ; Chua, C.M. ; Koh, L.S. ; Phang, J.C.H.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability (CICFAR), Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
The variation of backside reflectance modulation effects on metal line samples at different electrical bias and silicon backside thicknesses is investigated. Negative reflected intensity modulation is observed with temperature increase which is one to two orders of magnitude higher than published results. A backside reflectance model is developed to explain the experimental results.
Keywords :
metallic thin films; modulation; reflectivity; silicon; backside reflectance modulation; electrical bias; microscale metal interconnects; negative reflected intensity modulation; silicon backside thicknesses; Absorption; Measurement by laser beam; Metals; Reflectivity; Silicon; Substrates; Temperature measurement; laser reflectance; metal interconnect; substrate thickness;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784577
