Title :
A 10-Bit, 50 MS/s, 55 fJ/conversion-step SAR ADC with split capacitor array
Author :
Cho, Seong-Jin ; Hong, Yohan ; Yoo, Taegeun ; Baek, Kwang-Hyun
Author_Institution :
Sch. of Electr. & Electron. Eng., Chung-Ang Univ., Seoul, South Korea
Abstract :
In this paper, a split capacitor array structure for successive approximation register (SAR) ADC is proposed. By connecting the node of upper plate of LSB capacitor arrays to the reference voltage while MSB operation is activated, the proposed ADC can alleviate the problem of parasitic capacitance without using extra calibration circuitry and conversion cycles. The proposed ADC is designed using 0.13-um 1P6M CMOS technology. At a 1.2-V supply and 50 MS/s, the ADC achieves an SNDR of 56.9 dB and consumes 1.58 mW, resulting in a figure of merit (FOM) of 55 fJ/conversion-step. The ADC core occupies an active area of 350 × 440 um2.
Keywords :
CMOS integrated circuits; analogue-digital conversion; capacitors; low-power electronics; 1P6M CMOS technology; FOM; LSB capacitor arrays; MSB operation; SNDR; conversion cycles; conversion-step SAR ADC; extra calibration circuitry; figure of merit; gain 56.9 dB; parasitic capacitance; power 1.58 mW; size 0.13 mum; split capacitor array structure; successive approximation register; voltage 1.2 V; word length 10 bit; Indexes; Analog-to-digital converter (ADC); attenuation capacitor; split capacitor array; successive approximation register (SAR);
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157224