Title :
Oxide defects generation modeling and impact on BD understanding
Author :
Randriamihaja, Y. Mamy ; Huard, V. ; Zaka, A. ; Haendler, S. ; Federspiel, X. ; Rafik, M. ; Rideau, D. ; Roy, D. ; Bravaix, A.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
Microscopic characterization of defects into the depth of the gate oxide is used to compare defects generated during both Hot-Carrier Stress (HCS) and Fowler-Nordheim Stress (FNS). Measured defects are linked to the breakdown (BD) process and there creation rate is modeled.
Keywords :
hot carriers; semiconductor device breakdown; semiconductor device models; BD process; BD understanding; FNS; Fowler-Nordheim stress; HCS; breakdown process; creation rate; gate oxide; hot-carrier stress; measured defects; microscopic characterization; oxide defects generation modeling; Degradation; Logic gates; Stress; Stress measurement; Thickness measurement; Time measurement; Voltage measurement; FNS; HCS; TDDB; interface defects; oxide defects;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784580
