DocumentCode :
3381875
Title :
Characterization of hexagonal rare-earth aluminates for application in flash memories
Author :
Zahid, M.B. ; Degraeve, R. ; Toledano-Luque, M. ; Van Houdt, J.
Author_Institution :
imec, Leuven, Belgium
fYear :
2011
fDate :
10-14 April 2011
Abstract :
We use Gate-Side Trap Spectroscopy by Charge Injection and Sensing (GS-TSCIS) and Post Program-Post Erase Discharge (PPD-PED) to characterize crystalline Al2O3 and hexagonal rare-earth aluminates. The results show that high concentrations of electron traps are present close to the Al2O3/metal gate interface, whereas, in the hexagonal aluminates, the electron defect density is reduced, but the lower energetic barrier of these aluminates promotes a parasitic electron injection from the gate during erase.
Keywords :
flash memories; rare earth compounds; charge injection; electron defect density; electron traps; flash memories; gate-side trap spectroscopy; hexagonal rare-earth aluminates; parasitic electron injection; post program-post erase discharge; Aluminum oxide; Dielectrics; Discharges; Electron traps; Flash memory; Logic gates; Al2O3; Gate- Side Trap Spectroscopy by Charge Injection and Sensing (TSCIS); Rare-Earth Aluminates; Spatial profile;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2011.5784584
Filename :
5784584
Link To Document :
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