DocumentCode :
3381916
Title :
Single-nanowire Si solar cells
Author :
Kelzenberg, M.D. ; Turner-Evans, D.B. ; Kayes, B.M. ; Filler, M.A. ; Putnam, M.C. ; Lewis, N.S. ; Atwater, H.A.
Author_Institution :
California Institute of Technology, Pasadena, 91125, USA
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
6
Abstract :
Solar cells based on arrays of CVD-grown Si nano- or micro-wires are being considered as a potentially low-cost route to implementing a vertical multijunction cell design via radial p-n junctions. This geometry has been predicted to enable efficiencies competitive with planar multicrystalline Si designs, while reducing the materials and processing costs of solar cell fabrication [1]. To further assess the potential efficiency of cells based on this design, we present here experimental measurements of minority carrier diffusion lengths and surface recombination rates within nanowires via fabrication and characterization of single-wire solar cell devices. Furthermore, we consider a potential Si wire array-based solar cell design, and present device physics modeling of single-wire photovoltaic efficiency. Based on experimentally observed diffusion lengths within our wires, we model a radial junction wire solar cell capable of 17% photovoltaic energy conversion efficiency.
Keywords :
Costs; Fabrication; Geometry; Length measurement; Nanowires; P-n junctions; Photovoltaic cells; Photovoltaic systems; Solar power generation; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922736
Filename :
4922736
Link To Document :
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