Title :
Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers with low threshold currents grown by gas-source molecular beam epitaxy
Author :
Thiagarajan, P. ; Giudice, G.E. ; Temkin, H. ; Robinson, G.Y.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers grown by gas-source molecular beam epitaxy with low threshold currents are reported. Threshold currents as low as 1.1 mA at 20/spl deg/C and 6.1 mA at 100/spl deg/C were measured.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.1 mA; 1.3 mum; 100 C; 20 C; 6.1 mA; InAsP-InGaAsP; InAsP-InGaAsP lasers; gas-source molecular beam epitaxy; low threshold currents; Chemical lasers; Current measurement; Fiber lasers; Gas lasers; Indium phosphide; Optical reflection; Power lasers; Quantum well lasers; Semiconductor lasers; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553754
