CMOS low-power subthreshold reference voltage utilizing self-biased body effect

Two novel voltage reference using self-biased body effect are discussed in this paper. The proposed circuits based on the weighted difference of two gate-source voltages of two MOSFETs operated in subthreshold region and one of them with forward-biased body effect, can generate two ultra-low reference voltages of 171.1 mV and 243.2 mV with temperature coefficients of 15.6 ppm/°C and 14.8 ppm/°C in a range from -25°C~80°C, respectively. The voltage line sensitivities are 0.0025%/V and 0.0019%/V. The power supply rejection ratio (PSRR) are -110 dB and -105 dB at 100 Hz. The power dissipations are 0.74 μW and 1.4 μW at a 1.4-V power supply. The circuits were designed and simulated in 0.18 μm CMOS technology. The layouts illustrate the chip area are 0.016 mm² and 0.014 mm².